JPS5148152B2 - - Google Patents

Info

Publication number
JPS5148152B2
JPS5148152B2 JP47046629A JP4662972A JPS5148152B2 JP S5148152 B2 JPS5148152 B2 JP S5148152B2 JP 47046629 A JP47046629 A JP 47046629A JP 4662972 A JP4662972 A JP 4662972A JP S5148152 B2 JPS5148152 B2 JP S5148152B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP47046629A
Other languages
Japanese (ja)
Other versions
JPS499183A (en]
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP47046629A priority Critical patent/JPS5148152B2/ja
Priority to US05/356,949 priority patent/US3966881A/en
Priority to GB2159573A priority patent/GB1430480A/en
Priority to DE2323211A priority patent/DE2323211A1/de
Priority to CA170,965A priority patent/CA985603A/en
Publication of JPS499183A publication Critical patent/JPS499183A/ja
Publication of JPS5148152B2 publication Critical patent/JPS5148152B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S420/00—Alloys or metallic compositions
    • Y10S420/903—Semiconductive

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP47046629A 1972-05-11 1972-05-11 Expired JPS5148152B2 (en])

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP47046629A JPS5148152B2 (en]) 1972-05-11 1972-05-11
US05/356,949 US3966881A (en) 1972-05-11 1973-05-03 Method of making a single crystal intermetallic compound semiconductor
GB2159573A GB1430480A (en) 1972-05-11 1973-05-07 Methods of making single crystal intermetallic compounds semi conductors
DE2323211A DE2323211A1 (de) 1972-05-11 1973-05-09 Verfahren zur herstellung einer intermetallischen einkristall-halbleiterverbindung
CA170,965A CA985603A (en) 1972-05-11 1973-05-10 Method of making a single crystal intermetallic compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47046629A JPS5148152B2 (en]) 1972-05-11 1972-05-11

Publications (2)

Publication Number Publication Date
JPS499183A JPS499183A (en]) 1974-01-26
JPS5148152B2 true JPS5148152B2 (en]) 1976-12-18

Family

ID=12752572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47046629A Expired JPS5148152B2 (en]) 1972-05-11 1972-05-11

Country Status (5)

Country Link
US (1) US3966881A (en])
JP (1) JPS5148152B2 (en])
CA (1) CA985603A (en])
DE (1) DE2323211A1 (en])
GB (1) GB1430480A (en])

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2300616A1 (fr) * 1975-02-12 1976-09-10 Radiotechnique Compelec Procede de synthese de composes semi-conducteurs
DE2538946C3 (de) * 1975-09-02 1979-09-13 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren und Vorrichtung zum Herstellen eines Einkristalls
US4083748A (en) * 1975-10-30 1978-04-11 Western Electric Company, Inc. Method of forming and growing a single crystal of a semiconductor compound
US4521272A (en) * 1981-01-05 1985-06-04 At&T Technologies, Inc. Method for forming and growing a single crystal of a semiconductor compound
US4764350A (en) * 1986-10-08 1988-08-16 The United States Of America As Represented By The Secretary Of The Air Force Method and apparatus for synthesizing a single crystal of indium phosphide
JP3648703B2 (ja) * 2000-01-07 2005-05-18 株式会社日鉱マテリアルズ 化合物半導体単結晶の製造方法
TW201241249A (en) * 2011-04-12 2012-10-16 Dingten Ind Inc Single crystal growth method for vertical high temperature and high pressure group III-V compound
JP6061276B2 (ja) * 2014-08-29 2017-01-18 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ 金属層間のはんだ接合の形成方法
CN107868981B (zh) * 2016-09-28 2020-09-29 清华大学 一种金属铂的半金属化合物及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2985519A (en) * 1958-06-02 1961-05-23 Du Pont Production of silicon
US3694166A (en) * 1967-05-22 1972-09-26 Hughes Aircraft Co Crystal growth tube
US3582287A (en) * 1968-01-09 1971-06-01 Emil R Capita Seed pulling apparatus having diagonal feed and gas doping
JPS4820106B1 (en]) * 1968-03-08 1973-06-19
US3642443A (en) * 1968-08-19 1972-02-15 Ibm Group iii{14 v semiconductor twinned crystals and their preparation by solution growth
US3628998A (en) * 1969-09-23 1971-12-21 Ibm Method for growth of a mixed crystal with controlled composition
US3771970A (en) * 1970-02-02 1973-11-13 Tyco Laboratories Inc Method of producing cadmium telluride crystals

Also Published As

Publication number Publication date
JPS499183A (en]) 1974-01-26
GB1430480A (en) 1976-03-31
DE2323211A1 (de) 1973-11-22
US3966881A (en) 1976-06-29
CA985603A (en) 1976-03-16

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